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Ordering number: EN 4484B
CMOS LSI
LC3564RM,RT-10LV/12LV/15LV 64K (8192 words x 8 bits) SRAM
Overview
The LC3564RM,RT are 8192-word x 8bit, asynchronous, silicon gate, low-voltage CMOS SRAM LSIs.They operate from a 2.0 to 3.6V supply, making them ideal for handheld, battery-operated equipment. They are fully CMOS devices employing 2-layer A1 wiring to realize high-speed access, low operating current consumption and very low standby current. They incorporate control signal inputs; OE for high-speed memory access, and 2 chip enables CE1 and CE2 for power-down and device selection. They are ideal for systems requiring high speed, low power and battry backup or for easy mamory expansion. The very low standby current means that backup can also be achieved using a capacitor.
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Common-pin input/outputs, 3-state output Clock not needed (fully-static RAM) Package * SOP 28-pin (450mil) plastic package: LC3564RM series * TSOP 28-pin (8 x 13.4mm) plastic package: LC3564RT series
Package Dimensions
unit: mm
3158 - SOP28
[LC3564RM]
Features
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Supply voltage range: 2.0 to 3.6V * 3V operation: 2.7 to 3.6V * Battery operation: 2.0 to 2.4V
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High-speed access time * 3V operation - LC3564RM,RT-10LV: 100ns (max) - LC3564RM,RT-12LV: 120ns (max) - LC3564RM,RT-15LV: 150ns (max) * Battery operation - LC3564RM,RT-10LV: 200ns (max) - LC3564RM,RT-12LV: 250ns (max) - LC3564RM,RT-15LV: 300ns (max)
unit: mm
3221 - TSOP28
[LC3564RT]
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Very-low standby current * 3V operation - Ta 70C: 1.0A - Ta 85C: 3.0A * Battery operation - Ta 70C: 0.85A - Ta 85C: 2.5A
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Operating temperature range: -40 to +85C Data retention supply voltage: 2.0 to 3.6V Input/output levels: CMOS Compatible (0.8Vcc/0.2Vcc) 3 control inputs (OE, CE1, CE2)
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
60597HA(ID) / 50995TH(ID) / D2293JN No. 4484--1/10
LC3564RM,RT-10LV/12LV/15LV
Pin Assignment
Block Diagram
No. 4484--2/10
LC3564RM,RT-10LV/12LV/15LV
Pin Functions
Number 1 2 to 10, 21, 23 to 25 27 22 20, 26 11 to 13, 15 to 19 28, 14 Name NC A0 to A12 WE OE CE1, CE2 I/O1 to I/O8 VCC, GND No connection Address inputs Read/write control input Output enable input Chip enable inputs Data input/outputs Supply and ground pins Function
Truth Table
Mode Read cycle Write cycle Output disable No selection X Note: X = H or L L X X High impedance CE1 L L L H CE2 H H H X OE L X H X WE1 H L H X Data output Data input High impedance High impedance I/O Supply current ICCA ICCA ICCA ICCS ICCS
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Maximum supply voltage Input voltage range Input/output voltage range Operating temperature range Storage temperature range Symbol VCC max VIN VI/O Topr Tstg Conditions Ratings 4.6 -0.3 to VCC + 0.3 -0.3 to VCC + 0.3 -40 to +85 -55 to +125 Unit V V V C C
Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be restricted to Recommended operating conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Inout/Output Capacitance at Ta = 25C, f = 1 MHz
Ratings Parameter Input/output pin capacitance Input pin capacitance Note: Measured samples only. Symbol CI/O CI VI/O = 0V VI = 0V Conditions min. typ. 6 6 max. 10 10 pF pF Unit
No. 4484--3/10
LC3564RM,RT-10LV/12LV/15LV
3V Operation
DC Recommended Operating Ranges at Ta = -40 to +85C, VCC = 2.7 to 3.6V
Ratings Parameter Supply voltage Input voltage * When pulsewidth is less than 30 ns, the minimum value is -2.0V. Symbol min. VCC VIH VIL 2.7 0.8VCC -0.3* typ. 3.0 max. 3.6 VCC + 0.3 0.2VCC V V V Unit
DC Electrical Characteristics at Ta = -40 to +85C, VCC = 2.7 to 3.6V
Ratings Parameter Input leakage current I/O leakage current Output high level voltage Output low level voltage Symbol ILI ILO VOH VOL Conditions min. VIN = 0V to VCC VCE1 = VIH or VCE2 = VIL or VOE = VIH or VWE = VIL , VI/O = 0V to VCC IOH = -2.0mA IOL = 2.0mA VCE1 0.2V, VCE2 VCC- 0.2V, II/O = 0mA, VIN 0.2V or VIN VCC- 0.2V Ta 70C Ta 85C -1.0 -1.0 VCC - 0.4 typ.* 0.01 Unit max. +1.0 +1.0 0.4 1.0 3.0 A A V V A A
VCC - 0.2V/0.2V input
ICCA1
Operating supply current CMOS input
ICCA2
VCE1 = VIL, VCE2 = VIH, II/O = 0mA, VIN = VIH or VIL VCE1 = VIL, VCE2 = VIH, II/O = 0mA, duty = 100% min. cycle 200 ns cycle 1 s cycle
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0.01 -
4 25 15 10 1.0 3.0 1
mA mA mA mA A A mA
ICCA3
Standby supply current
VCC - 0.2V/0.2V input
ICCS1
VCE2 0.2V or Ta 70C {VCE1 VCC- 0.2V, VCE2 VCC- 0.2V} Ta 85C VCE2 = VIL or VCE1 = VIH, VIN = 0V to VCC
CMOS input * VCC = 3.0V, Ta = 25C
ICCS2
No. 4484--4/10
LC3564RM,RT-10LV/12LV/15LV
AC Electrical Characteristics at Ta = -40 to +85C, VCC = 2.7 to 3.6V
AC test conditions Input pulse voltage level: 0.2VCC to 0.8 VCC Input rise and fall times: 5 ns Input/output timing level: VCC/2 Output load: 30 pF (including jig capacitance) Read Cycle
LC3564RM,RT Parameter Symbol min. Read cycle time Address access time CE1 access time CE2 access time OE access time Output hold time CE1 output enable time CE2 output enable time OE output enable time CE1 output disable time CE2 output disable time OE output disable time tRC tAA tCA1 tCA2 tOA tOH tCOE1 tCOE2 tOOE tCOD1 tCOD2 tOOD 100 10 10 10 5 -10LV max. 100 100 100 50 35 35 25 min. 120 10 10 10 5 -12LV max. 120 120 120 60 40 40 30 min. 150 10 10 10 5 -15LV max. 150 150 150 75 50 50 40 ns ns ns ns ns ns ns ns ns ns ns ns Unit
Write Cycle
LC3564RM,RT Parameter Symbol min. Write cycle time Address setup time Write pulsewidth CE1 setup time CE2 setup time Write recovery time CE1 write recovery time CE2 write recovery time Data setup time Data hold time CE1 data hold time CE2 data hold time WE output enable time WE output disable time tWC tAS tWP tCW1 tCW2 tWR tWR1 tWR2 tDS tDH tDH1 tDH2 tWOE tWOD 100 0 60 70 70 0 0 0 50 0 0 0 5 -10LV max. 35 min. 120 0 70 80 80 0 0 0 55 0 0 0 5 -12LV max. 40 min. 150 0 80 90 90 0 0 0 60 0 0 0 5 -15LV max. 45 ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit
No. 4484--5/10
LC3564RM,RT-10LV/12LV/15LV
Battery Operation
DC Recommended Operating Ranges at Ta = -40 to +85C, VCC = 2.0 to 2.4V
Ratings Parameter Supply voltage Input voltage Symbol min. VCC VIH VIL 2.0 0.8VCC -0.3 typ. 2.2 max. 2.4 VCC + 0.3 0.2VCC V V V Unit
DC Electrical Characteristics at Ta = -40 to +85C, VCC = 2.0 to 2.4V
Ratings Parameter Input leakage current I/O leakage current Output high level voltage Output low level voltage Symbol ILI ILO VOH VOL Conditions min. VIN = 0V to VCC VCE1 = VIH or VCE2 = VIL or VOE = VIH or VWE = VIL , VI/O = 0V to VCC IOH = -0.5mA IOL = 0.5mA VCE1 0.2V, VCE2 VCC- 0.2V, II/O = 0mA, VIN 0.2V or VIN VCC- 0.2V Ta 70C Ta 85C -1.0 -1.0 VCC - 0.2 typ.* 0.01 Unit max. +1.0 +1.0 0.2 0.85 2.5 A A V V A A
VCC - 0.2V/0.2V input
ICCA1
Operating supply current CMOS input
ICCA2
VCE1 = VIL, VCE2 = VIH, II/O = 0mA, VIN = VIH or VIL VCE1 = VIL, VCE2 = VIH, II/O = 0mA, duty = 100% min. cycle 1 s cycle
-
0.01 -
2 10 5 0.85 2.5 800
mA mA mA A A mA
ICCA3
Standby supply current
VCC - 0.2V/0.2V input
ICCS1
VCE2 0.2V or Ta 70C {VCE1 VCC- 0.2V, VCE2 VCC- 0.2V} Ta 85C VCE2 = VIL or VCE1 = VIH, VIN = 0V to VCC
CMOS input * VCC = 2.2V, Ta = 25C
ICCS2
No. 4484--6/10
LC3564RM,RT-10LV/12LV/15LV
AC Electrical Characteristics at Ta = -40 to +85C, VCC = 2.0 to 2.4V
AC test conditions Input pulse voltage level: 0.2VCC to 0.8 VCC Input rise and fall times: 10 ns Input/output timing level: VCC/2 Output load: 30 pF (including jig capacitance) Read Cycle
LC3564RM,RT Parameter Symbol min. Read cycle time Address access time CE1 access time CE2 access time OE access time Output hold time CE1 output enable time CE2 output enable time OE output enable time CE1 output disable time CE2 output disable time OE output disable time tRC tAA tCA1 tCA2 tOA tOH tCOE1 tCOE2 tOOE tCOD1 tCOD2 tOOD 200 10 10 10 5 -10LV max. 200 200 200 120 70 70 50 min. 250 10 10 10 5 -12LV max. 250 250 250 130 80 80 60 min. 300 10 10 10 5 -15LV max. 300 300 300 150 100 100 80 ns ns ns ns ns ns ns ns ns ns ns ns Unit
Write Cycle
LC3564RM,RT Parameter Symbol min. Write cycle time Address setup time Write pulsewidth CE1 setup time CE2 setup time Write recovery time CE1 write recovery time CE2 write recovery time Data setup time Data hold time CE1 data hold time CE2 data hold time WE output enable time WE output disable time tWC tAS tWP tCW1 tCW2 tWR tWR1 tWR2 tDS tDH tDH1 tDH2 tWOE tWOD 200 0 120 140 140 0 0 0 120 0 0 0 5 -10LV max. 70 min. 250 0 140 160 160 0 0 0 130 0 0 0 5 -12LV max. 80 min. 300 0 160 180 180 0 0 0 150 0 0 0 5 -15LV max. 90 ns ns ns ns ns ns ns ns ns ns ns ns ns ns Unit
No. 4484--7/10
LC3564RM,RT-10LV/12LV/15LV
Timing Chart
Read Cycle: Note 1
Write Cycle 1 (WE write): Note 6
No. 4484--8/10
LC3564RM,RT-10LV/12LV/15LV
Write Cycle 2 (CE1 write): Note 6
Write Cycle 3 (CE2 write): Note 6
Note: 1. We should be held high level during the read cycle 2. Do not apply external signals that are out-of-phase with DOUT 3. tWP is a period when CE1 and WE are LOW and CE2 is HIGH. It is measured from when WE goes low level to when either CE1 and WE go HIGH or CE2 goes LOW, whichever occurs first. 4. tCW1 and tCW2 are periods when CE1 and WE are LOW and CE2 is HIGH. They are measured from when CE1 goes LOW and CE2 goes HIGH, respectively, to when either CE1 and WE go HIGH or CE2 goes LOW, whichever occurs first. 5. The outputs DOUT1 to DOUT8 are in a high-impedance state when OE is HIGH, CE1 is HIGH, CE2 is LOW and WE is LOW. 6. During the write cycle, OE is VIH or VIL. 7. DOUT has the same phase as the write data.
No. 4484--9/10
LC3564RM,RT-10LV/12LV/15LV
Data Retention Characteristics at Ta = -40 to +85C
3V Operation
Ratings Parameter Symbol Conditions min. Data retention supply voltage Chip enable setup time Chip enable hold time Note: tRC is the read cycle time. VDR tCDR tR VCE1 VCC - 0.2V, VCE2 VCC - 0.2V or VCE2 0.2V 2.0 0 tRC typ. max. 3.6 V ns ns Unit
Data Retention Waveform 1 (CE1 control)
Data Retention Waveform 2 (CE2 control)
Battery Operation
Ratings Parameter Symbol Conditions min. Data retention supply voltage VDR VCE1 VCC - 0.2V, VCE2 VCC - 0.2V or VCE2 0.2V 2.0 typ. max. 3.6 V Unit
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No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees, jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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This catalog provides information as of June, 1997. Specifications and information herein are subject to change without notice.
No. 4484--10/10

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